GUC Announces 2nm 16 Gbps HBM4E IP
Global Unichip Corp. (GUC) announced on September 22, 2026 that its HBM4E PHY and Controller IP is design-ready and has been adopted in customer AI ASICs, reaching data transfer speeds up to 16 Gbps o…
Global Unichip Corp. (GUC) announced on September 22, 2026 that its HBM4E PHY and Controller IP is design-ready and has been adopted in customer AI ASICs, reaching data transfer speeds up to 16 Gbps o…
SK Hynix's first U.S. high-bandwidth memory (HBM) advanced packaging facility, a $4 billion project in Indiana, will begin commercial production of HBM4E chips in the second half of 2029, aiming to cl…
NVIDIA has detailed its NVLink Fusion interconnect and NVHBM custom base-die memory architecture, which moves the memory controller into the HBM stack and delivers up to 30 percent higher memory bandw…
Samsung confirmed at the Hot Chips 2026 conference that its HBM4E memory will reach 16 Gbps per pin, up from the 14 Gbps currently shipping since late May. At 16 Gbps, a single HBM4E stack will delive…
Micron CEO Sanjay Mehrotra said artificial intelligence has changed the memory industry's traditional boom-and-bust cycle by creating sustained demand for high-bandwidth memory and other data-center p…
Micron Technology (NASDAQ:MU) trades at $937.11 with a 24/7 Wall St. 12-month price target of $966.70, implying 3.16% upside and a HOLD rating with 90% confidence. The stock has surged 228.54% year to…
SK hynix showcased a full-stack AI memory portfolio at Future of Memory and Storage 2026, held August 4-6 at the Santa Clara Convention Center, including 16-layer 48GB HBM4, wafer-bonded 375-layer 4D …
Samsung Electronics has surpassed $1 billion in sales of its next-generation high-bandwidth memory (HBM) 4 chips within about four months of mass production, which began on February 12, 2026. The comp…
Samsung Electronics unveiled its 3D memory roadmap for AI infrastructure at the Future of Memory and Storage (FMS) 2026 conference, introducing zHBM, zNAND-O, V10 BV-NAND, HBM4E, HBM5, and LPDDR5X-PIM…
Samsung Electronics reported record quarterly revenue of ₩171.5 trillion ($118.7 billion) and operating profit of ₩89.5 trillion ($62 billion) for Q2 2026, up 130% and 1,812.4% year-over-year respecti…
Samsung Electronics and SK Hynix posted a combined 150 trillion won in operating profit for the quarter ended June 30, with Samsung reporting 89.5 trillion won and SK Hynix 60.5 trillion won, both rec…
SK hynix posted a record second-quarter operating profit of 60.54 trillion won, up 557% from a year earlier, on revenue of 79.32 trillion won, driven by tight memory supply and AI infrastructure deman…
SK hynix reported preliminary second-quarter revenue of 79.3 trillion won and operating profit of 60.5 trillion won on July 29, both quarterly records, with a 76% operating margin. The memory maker at…
SK hynix reported a record quarterly operating profit of 60.54 trillion won ($41.6 billion) for the second quarter, a 557.2% surge from a year earlier, driven by rising memory prices for AI servers. R…
Samsung Electronics and Broadcom signed a memorandum of understanding worth more than $200 billion for AI memory, foundry and advanced packaging through 2030, announced at an AI summit in San Francisc…
Samsung Electronics signed a memorandum of understanding with Broadcom valued at over $200 billion to supply high-bandwidth memory and 2-nanometer foundry services for Broadcom's next-generation AI ch…
Samsung Electronics is forecasting a 19-fold increase in operating profit for Q2 2026 compared to the same quarter a year earlier, driven by a projected tripling of high bandwidth memory (HBM) sales. …
SK hynix shipped samples of its 12-stack HBM4E memory to major customers, achieving 16Gbps per pin and 48GB stacks with over 20% improved power efficiency. The new memory targets AI training and infer…
South Korean memory chipmaker SK hynix announced a 1,100 trillion won ($713 billion) investment plan to expand domestic manufacturing capacity, including new fabs for NAND and HBM, and will list on th…
Nvidia canceled a planned quad-die version of its Rubin Ultra AI accelerator, shifting to a dual-die design due to manufacturing execution concerns. The change moves from highly integrated CoWoS-L pac…