Samsung Electronics unveiled a next-generation memory strategy called 'CUBE' at Semicon Taiwan 2026, betting on 3D architectures to boost capacity, bandwidth, and energy efficiency for AI workloads. T…
Samsung Electronics unveiled a new 3D-memory roadmap, including zHBM and zNAND-O, claiming the zHBM system delivers about eight times the performance and over 10 times the memory density of next-gener…
Samsung Electronics Co. unveiled the industry's first concept models of zHBM, a next-generation memory architecture expected to deliver approximately eight times the performance of HBM5, at the Future…
Samsung Electronics unveiled its 3D memory roadmap for AI infrastructure at the Future of Memory and Storage (FMS) 2026 conference, introducing zHBM, zNAND-O, V10 BV-NAND, HBM4E, HBM5, and LPDDR5X-PIM…
Samsung Electronics introduced zHBM and zNAND-O 3D-memory concepts and a more-than-400-layer V10 BV-NAND prototype on August 4 at FMS 2026 in Santa Clara. Samsung says a next-generation zHBM interface…
Samsung Electronics and SK hynix are introducing new heat-dissipation technologies for their upcoming eighth-generation HBM5 memory chips, as thermal management becomes a critical challenge for AI acc…