Kioxia Corporation, a world leader in memory solutions, today announced that it has commenced sample shipments of 1 Tb (terabit) Triple-Level-Cell (TLC) memory devices utilizing its 10th-generation BiCS FLASH 3D flash memory technology. These will be primarily integrated into the company's enterprise and data center SSDs, strengthening Kioxia's lineup to meet the growing demand for AI storage, which requires higher performance, higher capacity, and lower power consumption. These new products will be manufactured using state-of-the-art equipment at Kioxia's Kitakami Plant Fab2 facility in Iwate Prefecture, Japan.
By leveraging innovative CMOS directly Bonded to Array (CBA) technology and On-Pitch Select Gate Drain (OPS) technology, both adopted since the 8th-generation BiCS FLASH, the 10th-generation technology achieves a NAND interface speed of 4.8 Gb/s, a 33% improvement over the 8th generation. Bit density has increased by 59% by stacking 332 layers and improving lateral density. Additionally, write and read power efficiencies have improved by 18% and 30% respectively, helping to reduce power consumption in data centers and enterprise infrastructure.