SK hynix has been broadening its collaboration with its strategic partner Dell Technologies (Dell). Following Dell Technologies World 2026, held in May in Las Vegas, US, SK hynix participated in the Dell Technologies Forum 2026 (DTF), held on Aug 25th at COEX in Seoul. During the latest event, the two companies reaffirmed their strong trust, while showcasing a wide array of next-generation AI memory solutions.
Dell hosts its Technologies Forum across major cities worldwide to strengthen collaboration with its key business partners in each region. As a core partner of Dell,
SK hynix has continuously participated in the forum held in Seoul since 2023. This year in particular, SK hynix presented a product portfolio spanning the entire memory hierarchy, targeting an AI infrastructure market that is expanding rapidly amid the swift advancement of AI technology. In doing so, the company once again proved its technological leadership in the AI era.
Sharing an ‘AI Memory Portfolio’ Spanning From PCs to Data Centers
SK hynix put considerable effort into this exhibition’s design to visually express its identity as a full-stack AI memory creator. The first thing visitors saw upon entering the booth was the front media signage, which drew their attention with media art highlighting the essential role AI memory plays in bringing AI into everyday life. The back wall was decorated with graphics conveying SK hynix’s vision and direction to build efficient, reliable AI infrastructure through its AI memory solutions, reinforcing a cohesive message throughout the booth.
Above all, visitors showed strong interest in the “server rack” exhibition space specially prepared for this year’s DTF. This interactive experience featured a touchscreen mounted on the front of a structure shaped like an AI server rack, The product details appear on the touchscreen when the structure was touched, it allowed visitors to intuitively grasp the role and importance of SK hynix products within an actual server system.
The eSSD products featured in the Scalable Data Server includ the PEB210 E1.S, which supports Direct Liquid Cooling (DLC); the PS1110 E3.S, which delivers high capacity and low power consumption in the NVMe* E3.S form factor; and the PS1101 E3.S, SK hynix’s first QLC*-based eSSD. The Server DRAM lineup was displayed side by side: the 256GB 3DS* RDIMM*, which achieves the industry’s largest capacity; the 128GB MRDIMM*, optimized for high-performance computing environments with its high bandwidth; and the 64GB RDIMM, which delivers fast speeds and high power efficiency, built on the world’s first 10-nanometer (nm) class sixth-generation (1c)* process technology. Visitors could also find detailed information on the second-generation
CMM (CXL* Memory Module)-DDR5*, another product featured in the Scalable Data Server.
high-capacity data processing.
- QLC: NAND flash memory is classified by the number of bits stored per cell — SLC (Single Level Cell, 1 bit), MLC (Multi Level Cell, 2 bits), TLC (Triple Level Cell, 3 bits), and QLC (Quadruple Level Cell, 4 bits). As storage capacity increases, more data can be stored in the same area.
* 3DS (3D Stacked Memory): High-performance memory that vertically connects two or more DRAM chips using TSV (Through-Silicon Via).
* RDIMM (Registered Dual In-line Memory Module): A server memory module composed of multiple DRAM chips.
* MRDIMM (Multiplexed Rank Dual In-line Memory Module): A product with significantly enhanced speed achieved by operating two ranks — the module’s basic operating units — simultaneously.
* The 10-nanometer (nm) class process technology has progressed sequentially through generations 1x, 1y, 1z, 1a, 1b, and 1c (sixth generation).
* CXL (Compute Express Link): An interface technology that efficiently connects memory, processors, and other components within a system to expand the limits of bandwidth and capacity.
* CMM-DDR5: A product that expands system capacity by 50% and increases bandwidth by 30% compared to conventional DDR5 modules, achieving a data processing capability of 36GB per second.
The products featured in the Hyper-Speed AI Server include the HBM* lineup — HBM3E, HBM4, and HBM4E — along with the 192GB SOCAMM2*, which improves power and space efficiency with its new form factor.
- SOCAMM2 (Small Outline Compression Attached Memory Module): A memory module form factor based on low-power DRAM, specialized and optimized for AI servers. SK hynix has announced the mass production of its 192GB SOCAMM2 built on 1cnm LPDDR5X. Above the front media signage, the “Product & System” exhibition space was organized into four zones: HBM, AI DRAM, AI NAND, and AI Reality. In the “HBM” zone on the far left, an actual HBM4 wafer was displayed alongside HBM4 and HBM4E products, drawing visitors in.
Next to it, the “AI DRAM” and “AI NAND” zones were arranged side by side, allowing visitors to view actual units and detailed specifications of key AI memory products backed by SK hynix’s partnership with Dell Technologies. The “AI DRAM” zone featured a versatile DRAM lineup optimized for AI server and PC environments, including SOCAMM2,
3DS RDIMM, RDIMM, CSODIMM*, LPCAMM2*, LPDDR*5X, and GDDR7. The “AI NAND” zone showcased a broad portfolio of eSSDs and cSSDs, led by SK hynix’s first QLC eSSD (PS1101) and its first QLC cSSD (PQC21), including the PS1101 E3.S, PEB210 E1.S,
PEB210 M.2, PCB01, PVF01, PQF02A/PQF02, and PQC21.
* LPCAMM2 (Low-Power Compression Attached Memory Module): An LPDDR5X-based module that delivers the performance of two conventional DDR5-based SODIMMs (modules for laptops and small PCs) while providing space savings along with low power consumption and high performance.
* LPDDR: The latest mobile DRAM product with low-power operating characteristics. The name is prefixed with LP (Low Power), and it has been developed in sequence: LPDDR1, 2, 3, 4, 4X, 5, 5X, and 6.
The “AI Reality” zone was placed on the far right of the display stand. Here, next to Dell’s R770 server system, actual units of SK hynix’s certified products installed in it — the 6400MT/s DDR5 RDIMM and the PS1010 E3.S — were displayed side by side, allowing visitors to see firsthand how SK hynix’s products are integrated into an actual Dell server.
“Memory Completes the AI Era” — Presenting the Direction of Technological Innovation to Realize AI’s Potential
This year’s event carried extra significance, as SK hynix delivered a keynote for the first time at a DTF held in Seoul. Taking the stage as a keynote speaker, Vice President Joo explained how next-generation memory solutions are completing the AI era, under the theme “The Invisible Engine: The Technology That Completes the AI Era.”
“Memory technology may not be visible on the surface, but it is the core driving force of the AI era, determining AI performance across every domain from storage to systems,” he emphasized. “SK hynix is steadily advancing its technological innovation so that AI can realize its full potential.”
At the Breakout Session, Technical Leader Cheolhoon Yang of NAND Product Planning and Technical Leader Hyunsoo Kang of NAND Product Planning took the stage together to deliver a presentation titled “eSSD and cSSD Solutions for the AI Era and the Collaboration Portfolio with Dell.” Yang introduced several ongoing technology innovations in the eSSD field aimed at improving the efficiency of memory solutions used in AI data centers. Kang then shared the technical requirements that next-generation cSSDs must meet for on-device AI environments, along with the ongoing efforts to achieve them.
SK hynix stated, “By participating in this DTF, we further strengthened our collaboration with our key partner, Dell, and widely showcased SK hynix’s technological capabilities as a full-stack AI memory creator.” The company added, “We will continue to expand our strategic partnerships in various ways with the major global big tech companies leading the AI era, while strengthening the leading position we have secured in the AI memory market.”