{"slug": "samsung-reveals-new-3d-memory-roadmap-in-bid-for-ai-tech-lead", "title": "Samsung reveals new 3D-memory roadmap in bid for AI tech lead", "summary": "Samsung Electronics unveiled a new 3D-memory roadmap, including zHBM and zNAND-O, claiming the zHBM system delivers about eight times the performance and over 10 times the memory density of next-generation HBM5, as it competes with SK Hynix and Micron Technology in the AI memory market. Samsung plans to ramp up HBM4 production in the second half of this year and introduced the industry's first V10 BV-NAND architecture with over 400 layers, increasing storage density by almost 60%.", "body_md": "# Samsung reveals new 3D-memory roadmap in bid for AI tech lead\n\nThe company is facing stiff competition from SK Hynix and Micron Technology\n\nSAMSUNG Electronics offered a glimpse of its most advanced memory hardware, touting improved performance and power efficiency in a bid to overtake rivals SK Hynix and Micron Technology in the race for long-term dominance.\n\nThe new system vertically stacks high-bandwidth memory on top of AI accelerators, delivering about eight times the performance of next-generation HBM5, Samsung said in a statement.\n\nUsing advanced wafer-bonding technology, the system will also achieve more than 10 times the memory density of HBM5, while also allowing customised designs. Samsung intends to ramp up production of HBM4 in the second half of this year. It hasn’t yet offered a definitive timeline for HBM5 or this future technology.\n\nSamsung’s technological push comes as fierce competition rages in the near-US$1 trillion memory market where Samsung is trading blows with SK Hynix, which established an early stronghold in the AI memory boom, as well as US-based Micron.\n\nAs the memory titans race to capture lucrative data centre contracts and scale up production, introducing next-generation architecture ahead of competitors has become vital to securing major customer commitments.\n\nThe new system, known as zHBM, underscores Samsung’s efforts to position itself as an end-to-end provider of infrastructure for the AI era.\n\nThe company also introduced zNAND-O, a next-generation NAND solution built on its V-NAND technology, which it said better supports real-time, data-intensive AI applications.\n\nSamsung also introduced the industry’ first V10 BV-NAND architecture, featuring a new wafer bonding architecture with over 400 layers. It increases storage density by almost 60 per cent compared to the previous generation while improving read and write speeds.\n\nAlongside this hardware vision, Samsung also displayed a product roadmap featuring next-generation processing-in-memory chips and high-capacity enterprise storage solutions. BLOOMBERG\n\nDecoding Asia newsletter: your guide to navigating Asia in a new global order. Sign up here to get Decoding Asia newsletter. Delivered to your inbox. Free.\n\nShare with us your feedback on BT's products and services", "url": "https://wpnews.pro/news/samsung-reveals-new-3d-memory-roadmap-in-bid-for-ai-tech-lead", "canonical_source": "https://www.businesstimes.com.sg/companies-markets/telcos-media-tech/samsung-reveals-new-3d-memory-roadmap-bid-ai-tech-lead", "published_at": "2026-08-05 01:37:36+00:00", "updated_at": "2026-08-05 01:53:12.276462+00:00", "lang": "en", "topics": ["ai-infrastructure", "ai-chips"], "entities": ["Samsung Electronics", "SK Hynix", "Micron Technology", "zHBM", "zNAND-O", "V10 BV-NAND", "HBM4", "HBM5"], "alternates": {"html": "https://wpnews.pro/news/samsung-reveals-new-3d-memory-roadmap-in-bid-for-ai-tech-lead", "markdown": "https://wpnews.pro/news/samsung-reveals-new-3d-memory-roadmap-in-bid-for-ai-tech-lead.md", "text": "https://wpnews.pro/news/samsung-reveals-new-3d-memory-roadmap-in-bid-for-ai-tech-lead.txt", "jsonld": "https://wpnews.pro/news/samsung-reveals-new-3d-memory-roadmap-in-bid-for-ai-tech-lead.jsonld"}}