Samsung Confirms HBM4E Memory Running at 16 Gbps Per Pin

Samsung confirmed at the Hot Chips 2026 conference that its HBM4E memory will reach 16 Gbps per pin, up from the 14 Gbps currently shipping since late May. At 16 Gbps, a single HBM4E stack will deliver 4 TB/s bandwidth, compared to 3.6 TB/s at 14 Gbps. Samsung's Sangwook Han announced the update, which boosts confidence in the company's scaling progress for high-bandwidth memory used in AI accelerators.

At the Hot Chips 2026 conference's Advance Program, Samsung's Sangwook Han confirmed that the company is preparing to ship HBM4E memory with speeds of 16 Gbps per pin. This is a significant confidence boost for Samsung's Semiconductor division, which has been shipping HBM4E with speeds of 14 Gbps per pin since late May of this year. Essentially, the company confirmed that its scaling progress is going well, and HBM4E represents another milestone in high-bandwidth memory technology that it can produce with impressive speed. Samsung's own HBM4 is now shipping at 11.7 Gbps, making the jump to HBM4E even more impressive. Currently, at 14 Gbps per pin and 2,048 pins per HBM4E stack, Samsung can achieve a maximum bandwidth of 3.6 TB/s. However, at 16 Gbps, this maximum memory bandwidth will increase to 4 TB/s for a single HBM4E stack. Considering about a dozen memory stacks per AI accelerator or GPU, the total memory bandwidth is remarkable. The company is also currently offering this memory in a 12-layer or 12-high configuration with a memory density of 48 GB per stack. However, customer requirements will also include 8-layer 32 GB and 16-layer 64 GB stacks in the future.