Samsung Electronics and Broadcom today announced the signing of a memorandum of understanding (MOU) to expand their strategic collaboration across memory and foundry technologies, supporting the next generation of AI infrastructure. The MOU was announced during the AI Summit, held at The Midway in San Francisco. Attendees included Jinman Han, President and Head of Samsung Electronics' Foundry Business, Hock Tan, President and CEO of Broadcom, senior executives from both companies and representatives of the Korean government. The companies expect the collaboration to be estimated at more than $200 billion across memory and foundry over the next five years through 2030.
On the memory front, Samsung and Broadcom plan to pursue a strategic collaboration for the supply of industry-leading memory solutions, including High Bandwidth Memory (HBM), supporting Broadcom's next-generation AI accelerators. In foundry, the companies' collaboration focuses on Samsung's 2-nanometer (nm) and below process technologies for Broadcom's products, including Wireless Broadband Communications (WBC) solutions. The collaboration is expected to extend to advanced packaging technologies built on Samsung's 2 nm process, including 2.3D and 2.5D integration, to enable higher-performance and more power-efficient AI and networking silicon.