(PR) Micron Develops 512 GB DDR5 RDIMM Server Memory Reaching 9200 MT/s

Micron Technology, Inc. (Nasdaq: MU) demonstrated the world's first 512 GB DDR5 module on multiple server platforms, delivering speeds up to 9,200 MT/s, with AMD and Intel actively validating the module. The module uses vertical interconnect packaging that stacks DRAM dies interconnected by through-silicon vias (TSVs), enabling up to 12 TB of DDR5 DRAM in a single 24-slot dual-socket server. Micron said the achievement targets enterprise data center and cloud customers running AI, analytics, in-memory database and simulation-heavy workloads.

Micron Technology, Inc. Nasdaq: MU , today announced a major milestone in memory innovation with the successful demonstration of the world's first 512 GB DDR5 module on multiple server platforms. The achievement reinforces Micron's leadership in high-performance, high-capacity server memory and provides enterprise data center and cloud customers with a path to support large and demanding AI, analytics, in-memory database and simulation-heavy workloads with greater efficiency. Leading semiconductor enablers, AMD and Intel, are both actively validating the module, which will deliver speeds up to 9,200 MT/s. The module's high capacity is possible due to Micron's advanced vertical interconnect packaging innovations. This product vertically stacks DRAM dies interconnected by through-silicon vias TSVs to maximize density within individual DRAM packages while preserving the performance modern data center architectures demand. The module enables up to 12 TB of DDR5 DRAM in a single 24-slot dual-socket server.