(PR) Kioxia Commences Sample Shipments of 9th-Generation BiCS FLASH 1 Tb TLC Devices

Kioxia Corporation announced it has commenced sample shipments of 1 Tb TLC memory devices using its 9th-generation BiCS FLASH 3D flash memory technology, targeting AI-enabled PCs and smartphones requiring high performance. The devices incorporate Kioxia's innovative CMOS directly Bonded to Array (CBA) and On-Pitch Select Gate Drain (OPS) technologies as part of a dual-axis strategy that also includes 10th-generation technology for massive capacity.

Kioxia Corporation, a world leader in memory solutions, today announced it has commenced sample shipments of 1 Tb terabit Triple-Level Cell TLC memory devices incorporating its 9th-generation BiCS FLASH 3D flash memory technology1. The devices are designed to support applications such as AI-enabled PCs and smartphones with low- to mid-level storage capacities that require high performance. Kioxia continues to pursue a dual-axis strategy based on its innovative CMOS directly Bonded to Array CBA technology and On-Pitch Select Gate Drain OPS technology. Under its unique dual-axis strategy, Kioxia is simultaneously advancing two distinct product lines: its 9th-generation solutions, which deliver high performance at relatively low cost of investing, and its 10th-generation technology, which leverages advanced layer stacking to achieve massive capacity and superior performance.