Kioxia Corporation, a subsidiary of Kioxia Holdings Corporation (TOKYO: 285A) and Sandisk Corporation (Nasdaq: SNDK) today unveiled their new 9th-generation, high-performance 2 Tb QLC 3D flash memory technology designed to support the growing storage demands of AI-driven infrastructure. The technology demonstrates how architectural innovation can help storage advance at the fast pace required by AI-driven workloads, while supporting more capital-efficient manufacturing.
Leveraging the companies' CMOS directly Bonded to Array (CBA) architecture, the new technology combines an advanced CMOS wafer with a proven memory-array platform, along with significant design and device innovation, to deliver performance improvements and enable faster deployment of advanced storage solutions for cloud and data-intensive applications. Compared with the previous 8th-generation 2 Tb QLC, the new technology delivers higher write and read bandwidth due to a 6-plane architecture and performance enhancements, and better write and read power efficiency. And it also delivers a NAND interface speed of 4.8 Gb/s, a 33% improvement over 8th-generation devices.