[Inside the Research] SK hynix’s CTI innovation advances 176-layer 3D NAND toward mass production

SK hynix Inc. announced on July 22, 2026, that its Charge Trap Isolation (CTI) innovation is advancing 176-layer 3D NAND flash memory toward mass production, a development that enhances cell-to-cell isolation to improve performance and reliability. The company presented the technology at the IEEE International Electron Devices Meeting (IEDM), highlighting its role in scaling NAND for AI memory applications.

IMAGE & VIDEO Download Inside the Research SK hynix’s CTI innovation advances 176-layer 3D NAND toward mass production July 22, 2026 ▲ Figure 1 The NAND Flash Cell-formation Process Inside the Research SK hynix’s CTI innovation advances 176-layer 3D NAND toward mass production July 22, 2026 TECH&AI 176 layer NANDCTIIEDMIEEENANDResearch InsideScaling From HBM to eSSD: How SK hynix is charting the future of full-stack memory July 8, 2026 TECH&AI AIAI MemorycHBMDRAMeSSDHBMNAND Five things you need to know about SK hynix and the future of AI memory June 23, 2026 TECH&AI AIAI MemoryDatacenterDRAMHBMNAND SK hynix Honored with Gold Tower Order and Presidential Citation at the 61st Invention Day Ceremony, Proving AI Memory Technological Leadership May 20, 2026 STORY 4D NANDAI MemoryHBMHBM4Invention DayNAND Inside the Research SK hynix’s CTI innovation advances 176-layer 3D NAND toward mass production July 22, 2026 TECH&AI 176 layer NANDCTIIEDMIEEENANDResearch InsideScaling From HBM to eSSD: How SK hynix is charting the future of full-stack memory July 8, 2026 TECH&AI AIAI MemorycHBMDRAMeSSDHBMNAND Five things you need to know about SK hynix and the future of AI memory June 23, 2026 TECH&AI AIAI MemoryDatacenterDRAMHBMNAND SK hynix Honored with Gold Tower Order and Presidential Citation at the 61st Invention Day Ceremony, Proving AI Memory Technological Leadership May 20, 2026 STORY 4D NANDAI MemoryHBMHBM4Invention DayNAND